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| ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m PD = 1.25W Complementary part number ZXTP25100DFH Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * * * High power dissipation SOT23 package High gain Low saturation voltage 180V forward blocking voltage 6V reverse blocking voltage E Application * * * * Motor control DC fans DC-DC converters Lamp, relay, and solenoid driving E C B Pinout - top view Ordering information Device ZXTN25100DFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 1B5 Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25100DFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb Linear derating factor Power dissipation at Tamb Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD =25C(c) PD =25C(b) PD Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 180 180 100 6 7 2.5 0.5 3 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25100DFH Characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25100DFH Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Symbol BVCBO BVCEX BVCEO BVEBO BVECX BVECO Min. 180 180 100 7 6 6 Typ. 220 220 130 8.3 8.2 8.7 <1 <1 120 80 215 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 300 120 40 910 860 450 170 60 20 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 175 8.7 16.4 115 763 158 300 s; duty cycle 2%. Max. Unit Conditions V V V V V V IC = 100 A IC = 100 A, RBE 1k -1V < VBE < 0.25V IC = 10mA (*) IE = 100 A IE = 100 A, RBC 1k 0.25V > VBC > -0.25V IE = 100 A, VCB = 144V VCB = 144V, Tamb= 100C VCE = 144V; RBE 1k -1V < VBE < 0.25V VEB = 5.6V IC = 0.5A, IB = 10mA(*) IC = 1A, IB = 100mA(*) IC = 2.5A, IB = 250mA(*) IC = 2.5A, IB = 250mA(*) IC = 2.5A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) IC = 0.5A, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 2.5A, VCE = 2V(*) MHz IC = 100mA, VCE = 10V f = 100MHz or or or Collector-base cut-off current ICBO Collector-emitter cut-off current Emitter-base cut-off current Collector-emitter saturation voltage ICEX IEBO VCE(sat) 50 20 100 50 170 95 330 1000 950 900 nA A nA nA mV mV mV mV mV 15 pF ns ns ns ns VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 500mA, IB1 = IB2= 50mA. NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25100DFH Typical characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25100DFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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